| PART |
Description |
Maker |
| LX5111A LX5111ACDP LX5111ACPWP LX5112A LX5112ACDP |
ULT RA 9 - CHANNEL SCSI TERMINATOR 9-LINE 110 ohm SCSI BUS TERMINATOR, PDSO16
ULT RA 9 - CHANNEL SCSI TERMINATOR
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| EBOX565-500-FL-DC-6300U EBOX565-500-FL-DC-6100U |
Intel? Core?i5-6300U 2.4 GHz/i3-6100U 2.3 GHz/CeleronR 3955U 2.0 GHz (Skylake ULT SoC)
|
Axiomtek Co., Ltd.
|
| FMX-32S FMN-G12S FMP-G12S |
200V,Ultra-Fast-Recovery Rectifier Diodes(200V，超快恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET
200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
